| 摘要 |
PURPOSE:To make the quantity of a dopant properly by a method wherein the depositing speed of the semiconductor material is held at 0.1-80Angstrom /sec, and the depositing speed of the dopant is controlled to 1/10-1/1,000 of the depositing speed of the semiconductor material. CONSTITUTION:A substrate 2 is arranged in a bell jar 1, and a silicon evaporation source 3, a dopant evaporation source 5 are arranged on the lower side thereof. A negative DC bias voltage is applied to the substrate 2 from an outside DC electric power source 4. Outputs of film thickness meters 7, 17 are fed back to control the temperatures of heaters for the silicon evaporation source 3 and the dopant evaporation source 5, the depositing speed of silicon is held at 0.1-80Angstrom /sec, and the depositing speed of the dopant is controlled to 1/10- 1/1,000 of the depositing speed of silicon. |
