| 摘要 |
PURPOSE:To manufacture a dynamic RAM of low voltage and large capacity, by providing a boosting means for applying the voltage which is higher than supply voltage, to a digit line and a word line which are connected to memory cell consisting of 1 transistor and 1 capacitor. CONSTITUTION:The potential of digit lines A, B, which has been sensed by a sense amplifier 50 is fed back to a digit line boosting circuit 51, and the digit line being ''1'' is boosted and is made higher than supply voltage. Also, the high level potential of a word line 60 is boosted by a word line boosting clock generating circuit and is made higher than supply voltage. In this way, a signal from a memory cell is made large enough, and a dynamic RAM of large capacity is manufactured. |
