| 摘要 |
PURPOSE:To improve the mounting strength of the semiconductor element for the titled device by a method wherein the main surface on the exposed side of the sapphire substrate on the semiconductor device, having a silicon-on-sapphire structure, is fixed in a sheath through the intermediary of a metal layer or an eutectic layer of metal and silicon. CONSTITUTION:A silicon layer or a polysilicon layer 11 is formed on the main surface on the adhered side of the sapphire substrate. Silicon layer 11 is formed by providing gold silitoc on the metal or gold-silicon eutectic metal 12 provided on the metallized layer 13 located inside the sheath 3a. Said silicon layer is adhered by applying heat and a mechanical stress. With the above-mentioned structure, the element chip of a silicon-on-sapphire structure can be mounted in an extremely high reliability, and the simplicity and reliability same as those for the element formed on a silicon substrate can be obtained. Also, the gas discharge due to the heating at the time of mounting is very little, and there exists no possibility of contamination of the element. |
