| 摘要 |
PURPOSE:To evaluate a semiconductor by wafer condition by changing temperature of samples in accordance with a change of temperature of gas to be supplied and a flow rate thereof. CONSTITUTION:A sample board 2 is inserted through an insulator 1, a heater 3 is buried at the lower part of board 2 and a gas pipe enclosing a cooling fin 4 of board is inserted into the hollow part 6 and external pipe 7. A major part of board 2 is dipped into the liquid nitrogen contained in a vessel 8. A heated nitrogen supply pipe 9 is provided in the vicinity of upper part of insulator 1, a vacuum line 10 and gas flow changing cap 11 and thermocuple 12 are provided at the top part of board 2. N2 is supplied from the pipe 7, cooled and dried by the liquid nitrogen. It passes the hollow part 6 and injects covering the upper part of the board 2. Thereby the sample 13 on the board 2 is cooled and is separated from the atmospheric condition. The sample 13 is fixed on the board by the vacuum line 10 and a temperature is detected by the thermocouple 12. The sample can be heated by supplying the high temperature dry N2 gas from the pipe 9. According to this structure, the sample can be evaluated in the wafer condition and the board 2 can be cooled up to -196 deg.C and is also resistive to noise. |
