| 摘要 |
PURPOSE:To reduce the complicated number of times of photoetching thereby contrive the cost reduction by a method wherein a nitride film is formed in a window hole of an oxide film on an Si substrate surface, and impurity ions are implanted from above this window hole and a nitride film resulting in the formation of an impurity region. CONSTITUTION:An oxide film 23 is formed on an Si wafer having an N<-> type region 22 on an N<+> type region 21, and a base forming window hole 23a is formed thereon. Next, a nitride film 24 is formed on the restricted part of the hole 23a. Next, B<+> ions are implanted from above the hole 23a and the film 24, and a heat treatment is performed resulting in the formation of a P<+> type region 27, a P<-> type base region 28 and a P-N junction 29. Thereat, the oxide film 23 is formed on the hole 23a part. Next, the film 24 is removed, and an emitter forming window hole 23b is formed. Then, P is introduced from the hole 23b as the impurity, and accordingly an N type emitter region 30 and a P-N junction 31 are formed in a region 28. In this manufacture, when forming the hole 23b, only the film 24 is removed, a complicated photoetching is unnecessitated, and therefore the manufacture is remarkably facilitated. |
