| 摘要 |
PURPOSE:To form a semiconductor thin film layer with good crystallinity by a method wherein a recess is formed in a semiconductor wafer of single crystal, and a semiconductor layer of polycrystal or amorphous structure is monocrystallized. CONSTITUTION:A recess 11 with suitable location and depth is formed on the surface of a single crystal semiconductor wafer 1 through etching. Then, an interlayer insulating layer 2, a monocrystallized semiconductor thin layer 3 and an interlayer insulating layer 4 are formed in order on a bottom surface 11b of the recess 11. Then, a polycrystalline semiconductor layer 6 is formed over the insulating layer 4, upper surface of the wafer 1 and a side surface 11a of the recess 11, and a laser beam 7 is irradiated upon the layer 6 to heat the same. Upon this heating, the polycrystalline semiconductor layer 6 is monocrystallized to form a semiconductor thin film layer 8. In this way, since the wafer 1 is used as a growth core for monocrystallization, it becomes possible to form a semiconductor thin film layer with good crystallinity. Similar effect can be attained also for the polycrystalline semiconductor layer of amorphous structure. |
