| 摘要 |
PURPOSE:To increase a number of elements in the functional layer by stacking the functional layers providing semiconductor elements and providing a heat radiating material in contact with a side wall of the functional layer. CONSTITUTION:A heat radiating material 4 consisting of a metal plate such as Al is fitted in such a manner as covering the external wall of a stacking type semiconductor device composed of a semiconductor substrate 1, functional layers 2a-2c and interlayer insulation films 3a-3b. The heat radiating plate 4 increase the surface area by introducing the waving structure or employs forcible cooling by allowing gas or fluid to flow into the plate. According to this constitution, a number of semiconductor elements to be formed on the functional layer can be increased because of excellent heat radiation characteristic. |
