| 摘要 |
PURPOSE:To obtain semiconductor devices of high integration density by utilizing a semiconductor substrate, three layers of electrodes and interlayer insulating films formed thereon respectively as the means for constituting a circuit. CONSTITUTION:An electrode 3 which forms a capacitance is deposited on a semiconductor substrate 1 through a thin gate insulation film 2. A shield electrode 5 is then formed in contact with a thermal oxide film 4 of the electrode 3 and a wiring electrode 7 is formed through an interlayer insulating film 6. Finally, the shield electrode 5 and a diffusion layer 8 on the substrate 1 are connected with an electrode 9. The substrate surface 10 under the electrode 3 and the diffusion layer 8 are connected through diffusion of the same conductivity type impurity. According to this constitution, a capacitance element is provided between the substrate 1 and electrode 3 and between the electrodes 3 and 5 under the signal wiring 7. Moreover, the electrode 5 has a capacitance element to the electrode 3 and simultaneously plays a role of the shielding electrode which prevents noises applied on the electrode 3 from the wiring 7. As exaplained above, a desired signal electrode which will become a noise source can be formed on the shielding electrode and thereby an integration density can be improved. |
