| 摘要 |
PURPOSE:To realize multi-function and large capacity device by arranging it vertically. CONSTITUTION:P or As or B is preliminarily implanted to the lower electrode 8. An insulation film for element isolation layer 2 is formed thereon, the area other than the layer 2 is removed, and an active layer consisting of the n<+> layer 3, n<-> layer 4, p layer 5, n<+> layer 6 is formed in such exposed region. Next, a metal layer is formed on the layers 3-6 and this is considered as the upper electrode layer 1. For this layer 1, a high melting point metal is used in case other active layer than the layers 3-6 which require a high temperature processing is formed thereon. In the device of such constitution, a device dimension is determined by the area of active region, and the area of input portion gives lesser influence as compared with that of a device where the input/output portion is arranged in the lateral direction of the active layer. Accordingly, a larger number of elements can be accommodated within a limited area. |
