| 摘要 |
PURPOSE:To prevent warp, distortion and separation of semiconductor layers by forming a film on a semiconductor layer having a thermal expansion coefficient different therefrom of a semiconductor device consisting of plurality of semiconductor layers. CONSTITUTION:The wiring and active elements 4k-4q are formed on a semiconductor substrate 1 and semiconductor layers 3a-3c. On the other hand, the films 5a, 5b having the thermal expansion coefficient different from that of semiconductor layers 3a-3c are formed at the lower surfaces of the semiconductor layers 3a, 3b. In a semiconductor layer 3a of semiconductor device thus formed, a thermal stress generated in the successive film forming process is cancelled by the film 5a and is reduced to a small value and thereby warp, distortion and separation etc. can be prevented. Moreover, the same effect can also be obtained for the semiconductor layer 3b by the film 5b. Thereby, warp, distortion and separation in semiconductor layers can be prevented. |
