MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form the width of a polycrystal silicon fuse with high accuracy through a process shaping a stage difference section onto a substrate, a process forming a polycrystal silicon layer onto the substrate containing the stage difference section and a process removing the polycrystal silicon layer through anisotropic etching only by approximately the film thickness section. CONSTITUTION:A CVD oxide film 4 is grown onto a field oxide film 1, and the CVD oxide film 4 is obtained through selective ethcing. The polycrystal silicon layer 2 is grown onto the whole surface, and only by the film thickness section t2 is etched lest the polycrystal silicon layer 2 should remain on the whole surface of the polycrystal silicon layer 2 by a dry etcher having anisotropy in the whole surface. Since the actual film thickness t of the polycrystal silicon layer 2 is the sum of the thickness t2 of the grown film and the thickness of the CVD oxide film 4, stage difference t4, in the stage difference section of the CVD oxide film 4, the polycrystal silicon layer 2 remains in the film thickness of t4 along the stage difference of the CVD oxide film 4 when the polycrystal silicon layer 2 is ethced only by t2.