发明名称 NONVOLATILE VARIABLE RESISTANCE ELEMENT
摘要 PURPOSE:To obtain a new element wherein a resistance value having an arbitrary accuracy can be set and the resistance value can be preserved even though a power source for an IC is cut off, by taking out at least two terminals to the outside. CONSTITUTION:In the drawing G, D, S, and B are a gate, a drain, a source, and a substrate, respectively, 1 is an oxide film, and 2 is a nitride film. In this constitution, when the substrate is grounded and a positive potential having a sufficient value is given, electrons are injected into a gate film from the substrate, and a Vth of this MNOS transistor is shifted to the positive side. Conversely, when a negative potential having sufficient value is given to the gate G, the electrons, which have been previously injected, are discharged to the substrate, and the Vth is shifted to the negative side. When the resistance value is to be changed, G'' and S'' are selected by SW1 and SW2, and an appropriate potential difference is given to said G'' and S''. Then the arbitrary Vth value is set, and the characteristics as the resistance body can be changed.
申请公布号 JPS5889870(A) 申请公布日期 1983.05.28
申请号 JP19810188079 申请日期 1981.11.24
申请人 CITIZEN TOKEI KK 发明人 HASHIMOTO SHINGO;HAYAFUCHI KAZUNARI
分类号 H01L27/04;H01L21/822;H01L21/8247;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L27/04
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