| 摘要 |
PURPOSE:To obtain a stable etching mask by a method wherein SiO2 protective layer is formed on polyamide base resin film then after forming photoresist film, specified part of said polyamide base resin film is selectively dryetched. CONSTITUTION:The silicon 1 after finishing electrode wiring is formed of SiO2 film 2 for selecting electrode wirings and electrode metallic aluminium 3. Firstly said aluminium 3 is coated with polyamide base resin film 4 by a spinner. Then polyamide ring is formed by means of heattreatment and SiO2 layer 5 is further formed by CVD treatment or coating. Continuously photoresist 6 is selectively formed by photoprocessing. Secondly after etching the SiO2 layer 5, the photoresist 6 is removed and the specified part of polyamide resin is further etched and removed utilizing the SiO2 layer as a mask. |
