发明名称 MULTILAYER WIRING STRUCTURE AND ITS FORMING METHOD
摘要 PURPOSE:To execute multilayer wiring with excellent reliability, to contract the wiring width and pitches, and to increase the density of integration by burying at least one part of lower layer wiring into the concave section of a foundation insulating layer. CONSTITUTION:In a wiring channel region 4, a linear concave section 9 with the same pattern as the form of the plane of Al 1 is shaped to the surface of a field insulating layer 8 (actually, a laminated film consisting of a comparatively thick SiO2 film and a phosphorus silicate glass film) formed to one main surface of a silicon substrate 7 in approximately 1mum depth, and Al 1 with approximately 1mum thickness is completely buried into the concave section 9. Accordingly, the surface of Al 1 is positioned substantially into the same surface as the surface of the insulating layer 8, and formed in an approximately flat surface. The flat surface is coated with a layer insulating film 10, and Al 2 with approximately 1mum thickness is shaped onto the layer insulating film 10 according to a predetermined pattern.
申请公布号 JPS5889843(A) 申请公布日期 1983.05.28
申请号 JP19810187044 申请日期 1981.11.24
申请人 HITACHI SEISAKUSHO KK 发明人 KOYANAGI MITSUMASA;SAITOU TETSUYA
分类号 H01L21/3205;(IPC1-7):01L21/88 主分类号 H01L21/3205
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