SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To eliminate the silicon etching making the etching speed of passivation film constant by a constitution wherein the passivation film is selectively removed from a specified position such as aluminum pad while a scribe line is coated with the passivation film. CONSTITUTION:A field SiO2 film 2 is selectively grown in the main surface of silicon substrate 1 and a scribe line 3 is formed on the periphery of each chip. A phosphorus silicate glass film is further formed on the surface of field SiO2 film 2 and a bonding pad 4 is provided on the field SiO2 film 2. Firstly the entire surface is coated with a passivation film 5 made of P-SiO and the film 5 is coated with photoresist with an opening 7 located on said pad 4 only with the scribe line 3 covered with said photoresist performing the wet etching of said film 5 utilizing said photoresist 8 as a mask. Secondly said passivation film 5 is completely removed by means of plasma discharging process to form a throughhole 6 exposing said pad 4.