| 摘要 |
PURPOSE:To provide an excellent characteristics by a method wherein the expected liquid phase growing main surface of substrate is exposed and arranged in a heating vessel charged with liquid phase gorwing material and conductive type impurities to be heated for melting. CONSTITUTION:The substrate 3 with B plane (111) turned upward is placed in a vessel 2 formed of high purity quartz with about 2mm. depth filled with molten Ga 4. Then GaP and tellurium as N type impurities is added to the melt before hermetically sealing the vessel with the cover member 2. In such a status, the vessel contained in a vessel container 5 is inserted into a reacting tube to be heated up to 1050 deg.C in inactive gas atmosphere. Then slowly cool down the vessel at cooling speed of 1-4 deg.C/min to be fetched out at room temperature forming N type grown layer about 80mum tick. Next Zn as a dopant and gallium trioxide as oxygen additive are added and heated up to 1,000 deg.C in said inactive atmosphere within said reacting tube and then slowly cooled down at the cooling speed of 1-3 deg.C/min to be fetched out at room temperature forming p type grown layer about 60mum thick. Furthermore, ohmic contact electrode is fixed to be divided into pellets to form elements. |
