| 摘要 |
PURPOSE:To remove the allowance of alignment, and to improve the degree of integration and yield by forming each region for forming an element in self- alignment shape. CONSTITUTION:SiO2 Layers 14 for isolation and P<+> type base sections 22 are prescribed simultaneously by common masks 8, and succeeding processes are all treated through a self-alignment system. Accordingly, since the processes of mask alignment can largely be reduced as a whole and the allowance of alignment can be removed substantially, working property is sharply improved while the area of the element is contracted and the degree of integration can be ameliorated, and yield can also be bettered. Since a P type base section 25 and an N<+> type emitter region 29 are also shaped severally through ion implantation while using a Si3N4 film 6 etched in self-alignment form after a poly Si layer 19 is selectively grown as a mask, each semiconductor region forming a transistor can be shaped in self-alignment form in every respect. |
