| 摘要 |
PURPOSE:To furnish a semiconductor laser element being excellent in the thermal property of beam emittance and consuming low power. CONSTITUTION:A substrate 1 formed on n type InP is provided with a groove (channel) 11 in the center of the main surface thereof along the longitudinal direction thereof. A clad layer 2 formed of InP turned to be of n type by containing Te is formed is superposition on the substrate 1. Meanwhile, an active layer 3 of InGaAsP and a clad layer 4 of InP turned to be of p type by containing Zn are superposed on the center of the clad layer 2, while a blocking layer 7 turned to be of p type by containing Zn and buried layer 6 turned to be of n type by containing Te are formed in sequential superposition on both sides of the above layers. Accordingly, the active layer 3 is positioned in a buried heterostructure wherein it is blocked up by the n and p type clad layers 2 and 4 above and below, and by a pair of n type buried layers 6 on both sides. Therefore, a threshold current value can be set to be as low as 10-40mA. As the result, an impressed power is small in relation to an optical output, and the rate of rise in temperature in pn junction is also small. |
