| 摘要 |
PURPOSE:To permit a reliable electrode metal sintered layer to be formed and to eliminate the exfoliation of an electrode as well as prevent the wetting property of solder from deteriorating, by removing the oxide film on the electrode metal surface formed in firing a glass film, and selectively overlaying a new electrode metal on the electrode metal formed previously. CONSTITUTION:An electrode metal 2.2 of Ni or the like is deposited on both surfaces of a semiconductor substrate 2.1. Then, the semiconductor substrate is sintered at a temperature of 700-900 deg.C. A resist 2.3 is applied to the whole surface of the semiconductor substrate 2.1 or all the semiconductor substrate surface except for the groove forming part to form an electrode protection film in formation of grooves by etching. Then, grooves 2.4 are formed in the semiconductor substrate 2.1. A glass film 2.5 is formed in each groove 2.4. After the glass films 2.5 are fired, the oxide films on the surfaces of the electrode metal 2.2 formed on both sides of the semiconductor substrate 2.1 are removed on treatment with an etching solution including H3PO4, HNO3, CH3COOH as principal components. Then, a second electrode metal 2.6 is piled up on the electrode metal 2.2 to a desired thickness. |
