发明名称 |
Semiconductive barium titanate |
摘要 |
Semiconductive barium titanate having a positive temperature coefficient of resistance comprises a barium titanate semiconductor including barium titanate and a small quantity of a doping element, and at least one additive selected from among silicon nitride, titanium nitride, zirconium nitride and silicon carbide. The semiconductive barium titanate of this invention has a sharp rise in the variation of specific resistivity with temperature change and a large specific resistivity ratio in the PTC temperature region, and can be produced with high reproducibility, since a widely differing quantity of the doping element can be effectively added to barium titanate.
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申请公布号 |
US4384989(A) |
申请公布日期 |
1983.05.24 |
申请号 |
US19820373817 |
申请日期 |
1982.04.30 |
申请人 |
KABUSHIKI KAISHA TOYOTA CHUO KENYUSHO |
发明人 |
KAMIGAITO, OSAMI;HIOKI, TATSUMI;YAMAMOTO, NOBUYUKI;HIROSE, YOSHIHARU;DOI, HARUO |
分类号 |
C04B35/468;H01C7/02;(IPC1-7):H01B1/08 |
主分类号 |
C04B35/468 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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