| 摘要 |
PURPOSE:To obtain a high-quality and uniform thin film in a large area, by depositing amorphous Si on a substrate in the presence of ionized or activated H and/or F gas and a gas containing N, so as to seal off a dangling bond in particular. CONSTITUTION:H and/or F, and N2 and/or NH3 are ionized or activated 13 outside an evaporation tank 1, the flow rate thereof is controlled 15 irrespective of the internal pressure of the tank 1, and thus the quantity of constituents affecting the characteristics of an amorphous Si thin film to be deposited is set 16 at a prescribed value. This is effective when an inner-tank gas pressure is not higher than 9X10<-4>Torr, and a constant quantity of active hydrogen or the like can be doped at all times even when the gas pressure is changed by deposits in the tank. A bias current of 0--10kV is applied to a substrate 3, and amorphous Si is deposited with Si 7 employed as an evaporation source. Thereby a dangling bond can be buried by H and/or F atoms fully and with excellent reproducibility, and by controlling the flow rate of gas, a discharged power and the velocity of evaporation of Si, a film whose valence electron is controlled can be formed in a large area at high speed and in uniformity. |
