| 摘要 |
PURPOSE:To readily obtain an accurate bipolar transistor by covering a semiconductor substrate with a thick insulating film, opening a hole corresponding to an active region, forming a thin insulating film on the periphery of the exposed active region, implanting prescribed impurity ions on the overall surface, thereby respectively forming base and emitter regions. CONSTITUTION:A thick SiO2 film 12 is covered on an N type Si substrate 11 to become a collector, is removed corresponding to an active region 13, and an SiO2 film which is thinner than the film 12 is formed only at the periphery of the region 13. Then, B<+> ions are implanted on the entire surface of the substrate 11 while selecting the implanting energy and dosage, a P type emitter region 17 which does not vary the conductive type is formed on the surface in the emitter forming region 15 surrounded by the film 14 and an N type base region 16 which is inverted in the conductive type is formed under the region 17. Simultaneously, the region which has the same conductive type as the region 16 is formed also under the film 14, and is integrated with the region 16. Then, a hole is opened at the film 14, a base electrode 18 which is contacted with the region 16 is formed, an emitter electrode 19 is formed on the region 17, and a collector electrode 20 is covered on the back surface of the substrate 11. |
