| 摘要 |
PURPOSE:To activate impurities effectively, to suppress the generation of a composite center and to increase the density of carriers, by making the intensity of the beams of Zn atoms stronger than those of Se atoms when n type ZnSe is grown by a molecular-beam epitaxial growing method. CONSTITUTION:When molecular-beam epitaxial processing is conducted with the degree of vacuum set at 10<11> Torr, with a Zn cell at 310 deg.C and with an Se cell at 190 deg.C, the intensities of the beams of Zn and Se atoms reaching the surface of a substrate are in the ratio of 5:1. When an n type ZnSe single crystal thin film is grown under these conditions, an usual Zn vacancy is not generated and the density of carriers is not lessened even when a large quantity of Ga (450 deg.C or above) is added. When the ratio in the intensity of beams between the Zn and Se atoms at the time of their arrival at the substrate is 5-6:1 as described above, the surface homology crystallinity of the thin film thus prepared is inferior to that in the intensity ratio of 1. However, this causes no hindrance practically, and thus the n type ZnSe single crystal thin film of high quality can be obtained by this method. |
