| 摘要 |
PURPOSE:To obtain continuously a semiconductor having high purity and excellent crystallinity by a method wherein a semiconductor-crystal retaining plate and a plate having through holes are held by a plate having immersion tanks and a substrate-crystal retaining plate between and each plate is made movable relatively. CONSTITUTION:Ga is put in immersion tanks 16-19, GaAs and Al are put in tanks 12-14, and Sn, Ge and Ge are put in the tanks 16-19 respectively, while GaAs and Ge are held in a tank 15. GaAs crystals 21-24 are held in the concave parts of a plate 20, while an n-GaAs crystal 3 is held in the concave part of a plate 1. At first, the immersion tanks of a plate 2 are matched with the solute tanks of a plate 8, while the holes 25-27 are matched with through media 9-11, and all of these plates are put in a reaction tube. Then, they are subjected to exhaustion and kept at the temperature of 800 deg.C in a stream of H2, so that Ga is purified and boats are also cleaned. Subsequently, the plate 20 is transferredIto prepare base solutions 34- 37, the plates 20 and 2 are transferred II to make GaAs 21-24 contact with the surface of solutions 38-41, and thereby the base solutions 35-37 are filled up in the through-holes 9-11. These solutions are left for about one hour. Then, while the solutions are cooled at a constant speed, the plate 1 is transferred III to make the crystal 3 contact with the solutions 38-41 sequentially, and thus, with temperature and time controlled, thick structures of p and n type AlGaAs and p type GaAs having desired thickness can be obtained. |
