| 摘要 |
PURPOSE:To provide a high-quality and uniform thin film in a large area, by evaporating amorphous Si on a substrate in the presence of ionized or activated H or F gas, and modified gas containing elements of III or V family, so as to seal off a dangling bond in particular. CONSTITUTION:H and/or F, and AsH3 and/or PH3 are ionized or activated 13 outside an evaporation tank 1, the flow rate thereof is controlled 15, and thereby the quantity of constituents affecting the characteristics of an amorphous Si thin film to be formed is set 16 at a prescribed value. This is effective when the pressure inside the tank is not higher than 9X10<-4>Torr, and a constant quantity of active hydrogen or the like can be added even when the pressure of gas fluctuates due to deposits in the tank. A substrate 3 is biased with a voltage of about 0--10kV, and amorphous Si is deposited with Si 7 employed as an evaporation source. Thereby a dangling bond can be buried by H and/or F atoms fully and with excellent reproducibility, and by controlling properly the flow rate of each gas, a discharged power and the velocity of evaporation of Si, a film whose valence electron is controlled can be formed in a large area at high speed and in uniformity. |
