发明名称 |
LIGHT EMITTING DIODE AND METHOD OF MAKING THE SAME |
摘要 |
<p>A light-emitting diode having a semiconductor active layer, a semiconductor first clad layer formed on a surface the semiconductor active layer, and a protrusion formed unitarily on a surface of the first clad layer, thereby to complete an input end of a light guide for light coupling therewith. A method of manufacturing this light emitting diode comprising the steps of forming a recess on one face of a semiconductor substrate, forming a semiconductor first clad layer on the abovementioned face of the semiconductor substrate, and selectively etching the substrate from the other face thereof so as to form a through-hole reaching the recess on the one face of the semiconductor substrate, thereby to expose at least a protrusion of the semiconductor first clad layer formed in the recess.</p> |
申请公布号 |
CA1147050(A) |
申请公布日期 |
1983.05.24 |
申请号 |
CA19800344504 |
申请日期 |
1980.01.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMANAKA, HARUYOSHI;KAZUMURA, MASARU |
分类号 |
G02B6/42;H01L33/20;H01L33/30;H01L33/40;(IPC1-7):H01L33/00 |
主分类号 |
G02B6/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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