发明名称 LIGHT EMITTING DIODE AND METHOD OF MAKING THE SAME
摘要 <p>A light-emitting diode having a semiconductor active layer, a semiconductor first clad layer formed on a surface the semiconductor active layer, and a protrusion formed unitarily on a surface of the first clad layer, thereby to complete an input end of a light guide for light coupling therewith. A method of manufacturing this light emitting diode comprising the steps of forming a recess on one face of a semiconductor substrate, forming a semiconductor first clad layer on the abovementioned face of the semiconductor substrate, and selectively etching the substrate from the other face thereof so as to form a through-hole reaching the recess on the one face of the semiconductor substrate, thereby to expose at least a protrusion of the semiconductor first clad layer formed in the recess.</p>
申请公布号 CA1147050(A) 申请公布日期 1983.05.24
申请号 CA19800344504 申请日期 1980.01.28
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMANAKA, HARUYOSHI;KAZUMURA, MASARU
分类号 G02B6/42;H01L33/20;H01L33/30;H01L33/40;(IPC1-7):H01L33/00 主分类号 G02B6/42
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