| 摘要 |
PURPOSE:To enhance the light emitting efficiency of a semiconductor light emitting diode element having a light emitting region at the center by forming a groove which is deeper than the periphery of the region, thereby eliminating the leakage current to the periphery of a pellet and concentrating the current only at the region. CONSTITUTION:An N type clad layer 12, a P type active layer 13 having a forbidden band width in response to the desired light emitting wavelength, a P type clad layer 14, and an N type cap layer 15 are laminated and grown on an N type semiconductor substrate 11, thereby forming a double hetero structure. At this time the forbidden band widths of the clad layers 12, 14 are increased larger than that of the layer 13, and the forbidden band width which is larger than the layer 12 is provided also in the layer 15. Subsequently, a P type impurity is selectively diffused from the surface of the layer 15, thereby forming a P type region 16 which is intruded into the layer 14, and a P type light emitting region 17 is produced into the layer 13 through the impurity. Then, a groove which is intruded into the substrate 11 around the selectively diffused region 16 and the light emitting region 17 is formed by etching, thereby reducing the leakage current. |
