发明名称 |
Non-volatile semiconductor memory device |
摘要 |
A silicon nitride layer and a memory gate electrode are successively formed over a portion of a principal surface of a semiconductor substrate between drain and source regions formed therein and adjacent to the drain region via a thin silicon dioxide layer. A portion of the substrate principal surface, to which the source region is contiguous, is covered by a thick silicon dioxide layer, and a selection gate electrode is buried in the thick silicon dioxide layer. This two-input gate transistor construction constitutes a memory cell.
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申请公布号 |
US4385308(A) |
申请公布日期 |
1983.05.24 |
申请号 |
US19800151599 |
申请日期 |
1980.05.20 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
UCHIDA, YUKIMASA |
分类号 |
H01L27/112;G11C16/04;G11C17/00;H01L21/8246;H01L21/8247;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L27/02;H01L29/34;H01L29/04 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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