| 摘要 |
PURPOSE:To prevent the shortcircuit between transfer electrodes by forming the transfer electrodes made of the first and second polycrystalline silicons forming 2-phase drive type charge transfer device and isolating the electrode with an SiO2 film having an Si3N4 film on the surface when electrically isolating the electrode. CONSTITUTION:An SiO2 film 22 is formed on the field region of a P type Si substrate 21, B ions are implanted on the film 22 with a mask, thereby forming a P type region 23, and a thick SiO2 film 24 is covered on the film 22. Then, a thin SiO2 film 25 is covered on the gate region of the exposed substrate 21, an N<-> type layer 26 is formed by implanting P ions under the film 25, an Si3N4 film 28 is covered over the entire surface, and a gate insulating film is formed of the films 25, 28. Thereafter, the first transfer electrode 29 which is made of polycrystalline silicon is formed thereon, with the electrode as a mask an N<--> type layer 30 is diffused and formed in the substrate 21 therebetween, and the exposed surface of the electrode 29 is covered with an SiO2 film 31. Then, the second transfer electrode 32 of polycrystalline silicon which is contacted at the lower surface with the film 28 is formed between the electrodes 29 while insulating with the film 31. |
