| 摘要 |
PURPOSE:To obtain an IC which can operate at a high speed even if a parallel driving circuit is increased by connecting an electrostatic breakdown protecting circuit to the terminal electrode of the IC through an element which can be selectively cut. CONSTITUTION:A diode D1 or a transistor Q1 is connected as a circuit for protecting electrostatic breakdown to the terminal electrode IN of an IC through an element 3 which can be selectively cut. Thus, all diodes or transistors 3 except the D1 or Q1 which is connected to an arbitrarily driven circuit 2 in case of driving a plurality of ICs can be cut. Accordingly, the electrostatic capacity of the D1 or Q1 can be suppressed to the minimum limit, this can be operated at a high speed much higher than the conventional parallel connection of only the driven circuit to the electrostatic breakdown protecting circuit, and the durability against the electrostatic damage is not lost as well. Generally, the output transistor of the driving circuit has large size, and in this case the transistor itself performs a role of an electrostatic breakdown protecting circuit, and the element 3 can be fully cut at the side of the driven circuit 2 side. |
