| 摘要 |
PURPOSE:To increase the bonding strength between a multilayer electrode and an insulating film by providing a nitride film layer between the junction region of an electrode layer and the insulating film constituting a lower layer. CONSTITUTION:After each region is formed on an Si substrate by a method known publicly, plasma SiN is connected onto the whole surface, photoetching is applied thereon, and thereby an SiN film 1-3 is formed in a junction region. Next, windows are opened selectively in an SiO2 film 1-2, Pt is connected thereto, and heating is made at the temperature of 500 deg.C. Thereafter, Pt which has not reacted is removed by aqua regia, and thereby connection layers 1-11-1-12 are formed of Pt-Si. Subsequently, Ti and Al are superposed thereon to prepare layers 1-13 and 1-14. According to this constitution, there is SiN between the SiO2 film 1-2 and Ti of the lowermost layer of a metal electrode, and thereby the strength of bonding with Ti is improved. Therefore, the strength of the junction region against exfoliation is increased, and there is not ununiformity in the strength nearly at all. Mo or Ti.W is also effective in addition to Ti. |
