发明名称 ULTRAVIOLET RAY ILLUMINATION ERASABLE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent unnecessary leakage current by coating at least the entire surface of a semiconductor memory chip with a film which has a property of passing ultraviolet ray but not passing unnecessary light except the ray. CONSTITUTION:A semiconductor memory chip 2 having a coating film 1 is assembled with a package 4 with ultraviolet ray passing glass 3. The wavelength range which contributes to the erasure of memory information is up to approx. 400nm, and even if the light having a wavelength longer than that is emitted, memory information is not erased. Accordingly, a protective film having long wavelength cutting filter characteristics is coated on the overall surface of the memory chip.
申请公布号 JPS5885554(A) 申请公布日期 1983.05.21
申请号 JP19810184885 申请日期 1981.11.17
申请人 MITSUBISHI DENKI KK 发明人 UEDA OSAMU
分类号 H01L31/02;G11C16/02;G11C16/18;G11C17/00;H01L21/8247;H01L23/02;H01L29/788;H01L29/792 主分类号 H01L31/02
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