| 摘要 |
PURPOSE:To obtain a high speed field effect transistor by forming an active layer, and forming a source region and a drain region in a self-aligning manner, thereby shortening the lengths of the Schottky gate and the active layer. CONSTITUTION:An SiO2 film 2 and a resist film 3 as masks Si ions are implanted to a semi-insulating GaAs substrate 1, thereby forming an N type active layer 8. After the films 2, 3 are removed, an SiO2 film 6 and a resist film 7 are patterned, with the films 6, 7 as masks Si ions are implanted, thereby forming an N<+> type source and drain regions 4, 5. The length of the layer 8 depends upon the width Lo of the film 6. After only the film 7 is removed, an N<-> type GaAs layer 14 is formed. A polycrystalline GaAs layer 15 and the film 6 are removed, a passivation film 9 such as SiO2 is formed, the part is then removed, thereby forming a source electrode 11, a drain electrode 12 and a Schottky gate electrode 10. |
