| 摘要 |
PURPOSE:To obtain high efficiency laser of low threshold value by forming a distribution reflector at one end of an output waveguide and a phase regulator at the other end and forming an active waveguide, a distribution reflector and the phase regulator in independent electrode structues, thereby improving the defects in the structure of a distribution reflection type semiconductor laser. CONSTITUTION:An output waveguide 22, an active waveguide 23 and a p type InP 24 are continously grown on a substrate 21, chemical etching is performed to the surface of the waveguide 22 with the waveguide 23 remaining, a periodic diffraction grating 27 is formed on the distribution reflector 221 of the exposed waveguide 22, p type InP 30, 31 are again grown on the surface, chemical etching is peformed to the surface of the waveguide 22 among electrodes 25, 28, 29, Au, Ge, Ni are deposited, thereby forming an electrode 26 and electrodes 25, 28, 29 by depositing Au-Zn. In this manner, the electrode structure that voltages are independently applied to the distribution reflector and the phase regulator is provided, thereby obtaining a semiconductor laser element capable of regulating to operate by a single wavelength oscillation with low threshold value in high efficiency. |
