| 摘要 |
PURPOSE:To control K1 value of garnet film, by a method wherein ruthenium is added to mixed type garnet obtained by liquid epitaxial growth. CONSTITUTION:When Ru is added to crystal Y3Fe5O12 into Y3(Fe5-xRux)O12, K1 value varies rapidly from negative to positive value with a small amount of additive as shown in dashed line of the figure. K1 is taken at ordinate and mole ratio of Ru to Fe is at abscissa. When Ru is added to mixed type garnet to vary K1 value and Ru is added to (YSmLuCa)3(GeFe)O12 as mixed type garnet, relation between additive amount of Ru to Fe and K1 value becomes linear as shown in solid line 7 of the figure, i.e. the value gradually increases at negative value with the additive amount. In this constitution, magnetic bubble memory device having wide bias margin can be manufactured. |
