| 摘要 |
PURPOSE:To obtain an electronic type variable resistance unit capable of controlling only with an analog signal to be applied to one select input line by employing as a semicondutor switch a threshold variable type non-volatile semiconductor memory (VTNVSM). CONSTITUTION:When an analog signal is applied to a gate voltage applying wirings 3, m pieces of VTNVSM 1-1, 1-2,..., 1-m set to a threshold voltage lower than the applied analog signal are conducted, and VTNVSM 1-(m+1),..., 1-n set to the threshold voltage higher than the applied analog signal remain non-conductive. Thus, the number of the semiconductor switches which simultaneously conduct without necessity of decoder and hence the resistance between input and output terminals 4 and 5 can be controlled. |
