| 摘要 |
PURPOSE:To increase the plasma resistance of a resist film constituted of fluoro- alkyl-acrylate compound polymer, by irradiating the specific fluoride. CONSTITUTION:When the CF4 plasma is irradiated on the resist film wherein the fluoro-alkyl-acrylate compound polymer is used for 2min under a condition of 13.56MHz, 100W and 0.5Torr, the rate of the film thickness decrease when etching reduces from 730Angstrom /min down to 300Angstrom /min resulting in the improvement of etching resistance. To perform the irradiation of gaseous fluoride, high frequency field at 0.1-100MHz can be impressed on the body to be irradiated in said gaseous fluoride atmosphere at 0.1-2Torr. The radiation power is 25- 500W and preferably 50-200, and the discharge time is 0.5min or more. As the gaseous organic fluoride, preferably the organic fluoride having 1-3 carbon atoms, e.g. CF4, C2F6, C3F8, CBrF3, CCl2F2, CHClF2 and CHF1 can be cited as the example. |
