| 摘要 |
PURPOSE:To allow the independent control of the discharge and make the reduction of the activated radical density due to an etching to be sensitively reflected to the variation of emission spectrum, by providing a discharge part to detect the intensity of emission spectrum down the gas flow from the etching part. CONSTITUTION:The first discharge plasma generation part 22 is separated from the etching part 26, the second discharge part 32 and the detection mechanism 33 to detect the light emission from said discharge part 32 are provided in an exhaust pipe 31, and the output of a high frequency source 24 to generate the discharge plasma in the first discharge part 22 is controlled by the signal from the detection mechanism 33 for the light emission spectrum from the second discharge part 32. Besides, this device is one wherein a wire mesh shield plate 34 is added to prevent the infiltration of the discharge plasma 37 from the second discharge part 32 into an etching chamber. |
