| 摘要 |
PURPOSE:To obtain a highly reliable semiconductor device with ample rear-side electrode ohmic contact and with excellent performance characteristics by a method wherein the surface wherein a rear-side electrode is to be built is converted into a poly-Si recrystallized layer that is capable of high impurity concentration. CONSTITUTION:To the rear side of a wafer 5 wherein an N<+> layer 3 is exposed just before the formation of a rear-side electrode, a mixture of N type impurity gas N<++> and Si gas is applied, for the formation of a poly-Si layer (a) in a pyrolysis or reduction process. The poly-Si layer (a) is exposed to a scanning laser beam 20 whereby the poly-Si layer (a) is placed under a short-time concentrated heat, and melts. The N<++> poly-Si is then recrystallized for the formation of a high-density recrystallized layer (b) on the N<+> layer 3. A rear-side electrode 12, of Cr-Ni-Sn-Ag, for example, is evaporated in this order upon the recrystallized layer (b). The ohmic cotact of the rear-side electrode 12 thus built is excellent because the recrystallized layer (b) is an N<++> layer. |
