| 摘要 |
PURPOSE:To simplify structure for requiring no SiO2 layer while also facilitating manufacture by completely interrupting a P type layer and an N type layer as low resistance layers by an I-type layer as a high resistance layer. CONSTITUTION:There is no leakage between both electrodes because the N type and P type layers as the low resistance films are mutually interrupted by the I-type layer as the high resistance layer. Accordingly, the SiO2 film as an insulating layer need not be inserted. Al is vapor-deposited to a substrate 1 as the lower electrode 2, and the N type amorphous silicon layer 3 is formed in the thickness of 300Angstrom . The lower electrode 2 and the amorphous silicon layer 3 are minutely processed in lower electrode shape through photolithography. The I- type amorphous silicon layer 4 and the P type amorphous silicon layer 5 are formed by using a mask. |
