| 摘要 |
PURPOSE:To keep the size of a scattering piece of the upper layer protection film and a hole (crator) accompanied with the scattering as small as possible and control the size of the crator to a desired degree in a semiconductor device obtained by cutting a cut wiring by laser light. CONSTITUTION:A thermal oxide film 2 is formed on an Si substrate 1 by a thermal oxidation. Next, after boring and active region, a gate insulating film is formed and covered with a polycrystalline Si film approx. 5,000Angstrom , and then the pattern formation of the Si gate simultaneously with the cut wiring 3 is performed by a photoetching method. The cut wiring 3 is covered with the first protection film 4. On the first protection film 4, the evaporation and patterning of an Al film are performed resulting in the formation of the Al wiring 5. Further, as a passivation film, a PSG film 51 of a forming condition having tensile stress is made to cover. |
