| 摘要 |
PURPOSE:To increase the dielectric resistance of P-N-P-N structure of sections except a mesa stripe, and to improve the linearity of current-beam output characteristics largely by introducing an InGaAsP layer between an n-InP layer and a p-InP current block layer having p-n-p-n current block structure of the sections except the mesa stripe. CONSTITUTION:The mesa stripe with 2mum width and 2-3mum height is formed to a multilayer film structure semiconductor wafer, which is manufactured by laminating the n-InP buffer layer 202, a non-doped InGaAsP active layer 203 having the composition of 1.3mum wavelength and a p-InP clad layer 204 onto a (100)n-InP substrate 201 in succession, in parallel in the <011> direction. The InGaAsP layer 205 having the composition of 1.3mum wavelength, the p-InP current block layer 206 and an n-InP current block layer 207 are all laminated to the sections except mesa stripe in burying growth, and a p-InP buried layer 208 and a p-InGaAsP electrode layer 209 having the composition of 1.2mum wavelength are laminated onto the whole surface. |
