摘要 |
PURPOSE:To obtain the manufacture of a semiconductor substrate which can manufacture the semiconductor substrate of double structure with thickness the same as the conventional semiconductor substrates at low cost with high material efficiency from a substrate thinner than the conventional substrates and can acquire the high life time of a small number of carriers. CONSTITUTION:A liquefied silica compound solution is applied and formed onto the thermal oxide film 12 of one surface of the substrate 11, and the same two substrates are pasted together. The two substrates 11, 11' are fast stuck and fixed through a silica compound layer 13 by solidifying liquid silica compound films through heat treatment. The n<+> type high-concentration impurity layers 14, 14' are formed through the diffusion of phosphorus (shown in Fig. (b)). (IV) Oxide films 15, 15' are grown through oxidation under a steam atmosphere. A material obtained by fast-sticking two substrates 11, 11' is slumped under a mixed glass atmosphere, and n<+> type slumping layers 16, 16' are shaped. (Fig. (c)). The whole is separated into several substrate through dipping in a hydrofluoric acid liquid after completion of said process. Mirror surface finishing is executed through the etching of the surface of the n<-> type layer 11. |