| 摘要 |
PURPOSE:To obtain a moat type semiconductor device of high withstand voltage and high reliability, by forming n<+> channel cut regions deeper than the p-n junction wherein the withstand voltage is possessed. CONSTITUTION:In a semiconductor substrate 1, an n collector region 14, an n<+> collector 15 of higher impurity density than in the n collector region 14 and p base region 16, an n<+> emitter region 17 of higher impurity density than in the p base region 16 and n channel cut regions 19 of higher impurity density than in the n collector region 14 which exist in the periphery of ring grooves, expose to the one side main surface and ring groove and are so formed that the interface surface 18 between the collector region 14 may be deeper than the collector junction Jc are provided. The numeral 5 are glasses covering the surface of ring grooves 13, and zinc-borosilicate glass e.g. the composition is 63wt% ZnO-29wt% B2O3-8wt% SiO2, NFB is -5X10<11>cm<-2> and the coefficient of thermal expansion is 38X10<-7>/ deg.C is used. |
