| 摘要 |
PURPOSE:To grow a single crystal of a compound semiconductor at low dislocation density by covering a melt in a crucible having a larger diameter at the bottom and a smaller diameter at the upper part with an inert liq. and by pulling up a single crystal through the liq. layer in an atmosphere under high pressure. CONSTITUTION:A crucible 3 is held in a crucible susceptor 2 similar to the crucible 3 in shape and enclosed by a heating element 1. The bottom 3a of the crucible 3 is made larger than the upper part 3b of the crucible 3 in diameter. A molten starting material 5 covered with a capsulating liq. 4 is charged into the crucible 3. InP or the like is used as the molten starting material, B2O3 or the like as the capsulating liq., and N2 or the like as an atmospheric gas for elevating the pressure. The temp. gradient of the temp. distribution of the crucible 3 along the central axis becomes smaller than that of an ordinary crucible having a uniform diameter. By pulling up a single crystal with the resulting crystal growing apparatus, the temp. gradient of the liq. capsule on the molten starting material is made very small, and a crystal with low dislocation density can be grown. |
