| 摘要 |
PURPOSE:To form a high-reliability magnetic bubble memory element easily while increasing the permitted value of a substrate feed precision error by exposing a subordinate pattern to a variable pattern area of a main pattern formed on a mask twice. CONSTITUTION:The main pattern area A of a mask consists of driving patterns 25 and 26, and a variable pattern area 27, and the subordinate pattern area B consists of an even-number and an odd-number pattern provided with patterns 28 and 32, and 31 and 34 corresponding to the patterns 25 and 26 while correpsonding to the area 27. This pattern A is used to expose a substrate coated with a photosensitive material. Then the substrate is moved where the correspondence part of the area 27 coincides with the desired even or odd pattern of the area B, and the 2nd exposure is performed. This pattern shape increase the permitted value of an error in substrate feed precision during exposure for photoetching, manufacturing a high-reliability magnetic bubble memory element easily. |
