| 摘要 |
PURPOSE:To obtain a photoconductive member superior in electrical, optical, and photoconductive characteristics and characteristics of environment of the use, by providing an amorphous layer, which consists of the first layer region containing N and the second layer region containing atoms of the third group of the periodic table, on a supporting material. CONSTITUTION:A gaseous raw material for Si supply, a gaseous raw material for halogen and/or H introduction, a gaseous raw material consisting of atoms of N, and a gaseous raw material consisting of atoms of the third group of the periodic table are flowed into a reaction chamber 201 from gas bombs 202-206 through valves 222-226, flow-in valves 212-216, mass flow controllers 207-211, and flow-out valves 271-221. A base cylinder 237 is heated at 50-400 deg.C by a heating heater 238, and the power of a power source 240 is set to a desired value to cause glow discharge in the chamber 201, and the first layer region containing N is formed on the cylinder 237, and thereafter, the bomb 206 is closed to stop the supply of atoms containing N, and the second layer region containing atoms of the third group of the periodic table is formed. |
