| 摘要 |
PURPOSE:To minimize the samllest hold magnetic field by specifying the beveling direction of a magnetic bubble memory element using magnetic garnet crystal onto a wafer and setting an in-surface hold magnetic field in a prescribed direction. CONSTITUTION:When the beveling direction of a magnetic bubble memory element 4 to a wafer 3 is specified, an in-surface hold magnetic field 5 when a bias magnetic field is applied in a garnet crystal direction (1,1,1) is coincident with an easy magnetization axis direction (-2,1,1), (1,-2,1) or (1,1,-2); when the bias magnetic field is applied in a direction (-1,-1,-1), the magnetic field 5 is coincident with an easy magnetization axis direction (2,-1,1), (-1,1,-1), or (-1,-1,2). Therefore, the smallest hold magnetic field is minimized to prevent a decrease in operation driving margin without deteriorating the start and stop characteristics of the magnetic bubble memory. |
