| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH A DOUBLE INTERCONNECTION LAYER |
| 摘要 |
A semiconductor integrated circuit device including a substrate (1) of semiconductor having an insulation layer (2) formed on it, a first layer (3) of semiconductive material forming a wiring layer on the insulation layer, and a second layer (7) of semiconductive material forming a further wiring layer connected in parallel with the first wiring layer via contact holes (5, 6) in an intervening insulation layer (4). |
| 申请公布号 |
DE3062675(D1) |
申请公布日期 |
1983.05.19 |
| 申请号 |
DE19803062675 |
申请日期 |
1980.03.05 |
| 申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
ASANO, MASAMICHI;IWAHASHI, HIROSHI |
| 分类号 |
H01L27/04;H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L23/528;H01L29/51;(IPC1-7):01L23/52;01L29/60;01L29/62 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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