发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive an increase in an area effective to the junction of a bonding pad by a method wherein a protruded section corresponding to the beveling portion at the inside of a capillary abutting to the bonding pad is formed at the bonding pad. CONSTITUTION:A bonding pad 4 is formed on a gate oxide film 3 formed on an Si substrate 4 which is of stepped constitution providing a prtruded portion to the beveling portion 7a at the inside of a capillary 7. In this way, an Al oxide layer at the edge portion on the step of the pad 4 is firstly destructed to form a junction and a junction progresses at the flat portion of the central portion of the pad 4 by its infuence. As the result, an area effective to the junction of the pad 4 increases.
申请公布号 JPS5882526(A) 申请公布日期 1983.05.18
申请号 JP19810179789 申请日期 1981.11.11
申请人 TOKYO SHIBAURA DENKI KK 发明人 KUROMARU AKIRA
分类号 H01L21/60 主分类号 H01L21/60
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